![]() V oc measurements were carried out on all the samples by suns- V oc method and showed an improvement of the quality of the passivation brought by the oxide layer. SiO x layers of thickness of 105 nm combined with PS layer led to 3.8% effective reflectivity. To reduce the reflectivity and improve the stability and passivation properties of PS ARC, silicon oxide layers were deposited by PECVD on PS ARC. ![]() Single layers PS antireflection coating (ARC) achieved around 9% of effective reflectivity in the wavelength range between 4 nm on junction n +–p solar cells. The thickness and the porosity of the PS layer were determined by an ellipsometer, as a function of time duration of anodization, and the variation law of the PS growth kinetics is established. PS layers were grown on the front surface of the n + emitter of n +–p mono-crystalline Silicon junction. ![]() The meso-porous silicon (PS) has become an interesting material owing to its potential applications in many fields, including optoelectronics and photovoltaics. ![]()
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